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1

Mounting of high power laser diodes on boron nitride heat sinks using an optimized Au/Sn metallurgy

Pittroff, W., Erbert, G., Beister, G., Bugge, F., Klein, A., Knauer, A., Maege, J., Ressel, P., Sebastian, J., Staske, R., Traenkle, G.

Journal:

IEEE Transactions on Advanced Packaging

Year:

2001

Language:

english

File:

PDF, 356 KB

english, 2001

2

Talking Feelings: The Collaborative Construction of Emotion in Talk Between Close Relational Partners

Shirley A. Staske

Journal:

Symbolic Interaction

Year:

1996

Language:

english

File:

PDF, 1.32 MB

english, 1996

3

5-W Reliable Operation Over 2000 h of 5-mm-Wide 650-nm AlGaInP–GaInP–AlGaAs Laser Bars With Asymmetric Cladding Layers

Sumpf, B., Zorn, M., Staske, R., Fricke, J., Ressel, P., Erbert, G., Weyers, M., Trankle, G.

Journal:

IEEE Photonics Technology Letters

Year:

2006

Language:

english

File:

PDF, 117 KB

english, 2006

4

Claiming Individualized Knowledge of a Conversational Partner

Staske, Shirley

Journal:

Research on Language and Social Interaction

Year:

2002

Language:

english

File:

PDF, 157 KB

english, 2002

5

[IEEE Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference - Monterey, CA, USA (25-28 Sept. 2000)] Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092) - High power 810 nm GaAsP/AlGaAs diode lasers with narrow beam divergence

Sebastian, J., Beister, G., Bugge, F., Erbert, G., Hansel, H.G., Buhrandt, F., Knauer, A., Hulsewede, R., Wenzel, H., Staske, R., Weyers, M., Trankle, G.

Year:

2000

Language:

english

File:

PDF, 155 KB

english, 2000

6

5.6-W Broad-Area Lasers With a Vertical Far-Field Angle of 31 Emitting at 670 nm

Sumpf, B., Zorn, M., Maiwald, M., Staske, R., Fricke, J., Ressel, P., Erbert, G., Weyers, M., Trankle, G.

Journal:

IEEE Photonics Technology Letters

Year:

2008

Language:

english

File:

PDF, 236 KB

english, 2008

7

650-nm InGaP Broad Area Lasers With 5000-h Reliable Operation at 600 mW

Sumpf, B., Zorn, M., Staske, R., Fricke, J., Ginolas, A., Hausler, K., Pittroff, W., Ressel, P., Erbert, G., Weyers, M., Trankle, G.

Journal:

IEEE Photonics Technology Letters

Year:

2007

Language:

english

File:

PDF, 134 KB

english, 2007

8

[IEEE Conference Digest. 2004 IEEE 19th International Semiconductor Laser Conference - Matsue-shi, Japan (21-25 Sept. 2004)] 2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. - High-power, high-efficiency 1150 nm quantum well laser

Erbert, G., Bugge, F., Fricke, J., Ressel, P., Staske, R., Sumpf, B., Wenzel, H., Weyers, M., Trankle, G.

Year:

2004

Language:

english

File:

PDF, 190 KB

english, 2004

9

Corrections to “Efficient High-Power Laser Diodes” [Jul/Aug 13 1501211]

Crump, Paul, Erbert, Gotz, Wenzel, Hans, Frevert, Carlo, Schultz, Christoph M., Hasler, Karl-Heinz, Staske, Ralf, Sumpf, Bernd, MaaBdorf, Andre, Bugge, Frank, Knigge, Steffen, Trankle, Gunther

Journal:

IEEE Journal of Selected Topics in Quantum Electronics

Year:

2014

Language:

english

File:

PDF, 155 KB

english, 2014

10

The Normalization Of Problematic Emotion In Conversations Between Close Relational Partners:Interpersonal Emotion Work

Shirley A. Staske

Journal:

Symbolic Interaction

Year:

1998

Language:

english

File:

PDF, 1.30 MB

english, 1998

11

3-W Broad Area Lasers and 12-W Bars With Conversion Efficiencies up to 40% at 650 nm

Sumpf, Bernd, Zorn, Martin, Staske, Ralf, Fricke, Jorg, Ressel, Peter, Ginolas, Arnim, Paschke, Katrin, Erbert, Gotz, Weyers, Markus, Trankle, Gunther

Journal:

IEEE Journal of Selected Topics in Quantum Electronics

Year:

2007

Language:

english

File:

PDF, 290 KB

english, 2007

12

Passively Cooled TM Polarized 808-nm Laser Bars With 70% Power Conversion at 80-W and 55-W Peak Power per 100-m Stripe Width

Crump, P., Wenzel, H., Erbert, G., Ressel, P., Zorn, M., Bugge, F., Einfeldt, S., Staske, R., Zeimer, U., Pietrzak, A., Trankle, G.

Journal:

IEEE Photonics Technology Letters

Year:

2008

Language:

english

File:

PDF, 191 KB

english, 2008

13

[IEEE 2006 IEEE 20th International Semiconductor Laser Conference, 2006. Conference Digest. - Kohala Coast, HI, USA ()] 2006 IEEE 20th International Semiconductor Laser Conference, 2006. Conference Digest. - 3 W - Broad Area Lasers and 12 W - Bars with Conversion Efficiencies up to 40% at 650 nm

Sumpf, B., Zorn, M., Staske, R., Fricke, J., Ressel, P., Ginolas, A., Paschke, K., Erbert, G., Weyers, M., Trankle, G.

Year:

2006

Language:

english

File:

PDF, 178 KB

english, 2006

14

[IEEE 2008 Conference on Lasers and Electro-Optics (CLEO) - San Jose, CA, USA (2008.05.4-2008.05.9)] 2008 Conference on Lasers and Electro-Optics - Peak power from 60-μm broad area single emitter limited to 50-w by carrier escape

Pietrzak, A., Crump, P., Staske, R., Wenzel, H., Erbert, G., Trankle, G.

Year:

2008

Language:

english

File:

PDF, 257 KB

english, 2008

15

SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California, USA (Saturday 2 February 2013)] Novel In-Plane Semiconductor Lasers XII - Dynamics of high power gain switched DFB RW laser under high current pulse excitation on a nanosecond time scale

Klehr, A., Schwertfeger, S., Wenzel, H., Hoffmann, Th., Liero, A., Staske, R., Brox, O., Erbert, G., Tränkle, G., Belyanin, Alexey A., Smowton, Peter M.

Year:

2013

Language:

english

File:

PDF, 606 KB

english, 2013

16

[IEEE CLEO 2001. Technical Digest. Summaries of papers presented at the Conference on Lasers and Electro-Optics. Postconference Technical Digest - Baltimore, MD, USA (2001.5.11-2001.5.11)] Technical Digest. Summaries of papers presented at the Conference on Lasers and Electro-Optics. Postconference Technical Digest (IEEE Cat. No.01CH37170) - High power 1120 nm-diode lasers with highly strained InGaAs QWs

Bugge, F., Erbert, G., Hulsewede, R., Ressel, P., Staske, R., Wenzel, H., Weyers, M., Zeimer, U., Trankle, G.

Year:

2001

Language:

english

File:

PDF, 120 KB

english, 2001

17

[IEEE CLEO/Europe. 2005 Conference on Lasers and Electro-Optics Europe, 2005. - Munich, Germany (12-17 June 2005)] CLEO/Europe. 2005 Conference on Lasers and Electro-Optics Europe, 2005. - Passively cooled 940 nm laser bars with 73 % wall-plug efficiency and high reliability at 98 W quasi-cw output power

Knigge, A., Erbert, G., Jonsson, J., Staske, R., Sumpf, B., Weyers, M., Trankle, G.

Year:

2005

Language:

english

File:

PDF, 229 KB

english, 2005

18

High-power 980 nm quantum dot broad area lasers

Sumpf, B., Deubert, S., Erbert, G., Fricke, J., Reithmaier, J.P., Forchel, A., Staske, R., Tränkle, G.

Journal:

Electronics Letters

Year:

2003

Language:

english

File:

PDF, 195 KB

english, 2003

19

Fluorescence of Sm3+ in Sm/Cu-codoped (Li2B4O7)1−x(WO3)x glasses

R. Staske, P. Fröbel, K. Bärner

Journal:

Journal of Luminescence

Year:

1993

Language:

english

File:

PDF, 661 KB

english, 1993

20

MOVPE growth optimization for laser diodes with highly strained InGaAs MQWs

F. Bugge, U. Zeimer, R. Staske, B. Sumpf, G. Erbert, M. Weyers

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 729 KB

english, 2007

21

Eine einfache Synthese von Derivaten des 2′,5′-Didesoxy-5′-fluor-uridins

Gottfried Herrmann, Regine Staske, Dieter Cech

Journal:

Zeitschrift für Chemie

Year:

1978

Language:

german

File:

PDF, 291 KB

german, 1978

22

Efficient High-Power Laser Diodes

Crump, P., Erbert, G., Wenzel, H., Frevert, C., Schultz, C. M., Hasler, K-H, Staske, R., Sumpf, B., Maassdorf, A., Bugge, F., Knigge, S., Trankle, G.

Journal:

IEEE Journal of Selected Topics in Quantum Electronics

Year:

2013

Language:

english

File:

PDF, 806 KB

english, 2013

23

[IEEE 2009 9th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) - Gwangju, South Korea (2009.09.14-2009.09.17)] 2009 9th International Conference on Numerical Simulation of Optoelectronic Devices - Maximum output power of broad-area laser diodes

Wenzel, H., Crump, P., Pietrzak, A., Roder, C., Staske, R., Wang, X., Erbert, G.

Year:

2009

Language:

english

File:

PDF, 562 KB

english, 2009

24

Synthese und biochemische Aktivität perfluoralkylierter Derivate des 5′-Desoxy-5′-fluor und 2′,5′-Didesoxy-5′-fluor-uridins

Dr. sc. D. Cech, G. Herrmann, R. Staske, Prof. Dr. P. Langen, Dr. B. Preussel

Journal:

Advanced Synthesis & Catalysis

Year:

1979

File:

PDF, 469 KB

1979

25

SPIE Proceedings [SPIE SPIE LASE - San Francisco, California, United States (Saturday 1 February 2014)] High-Power Diode Laser Technology and Applications XII - Characterization of diode-laser stacks for high-energy-class solid state lasers

Zediker, Mark S., Pilar, Jan, Sikocinski, Pawel, Pranowicz, Alina, Divoky, Martin, Crump, P., Staske, R., Lucianetti, Antonio, Mocek, Tomas

Year:

2014

Language:

english

File:

PDF, 3.52 MB

english, 2014

26

Lattice parameter variation in inp related to the dopant element and doping level

A. Knauer, Dr. J. Kräusslich, Dr. R. Kittner, R. Staske, Dr. A. Bärwolff

Journal:

Crystal Research and Technology

Year:

1990

Language:

english

File:

PDF, 491 KB

english, 1990

27

Nearly diffraction limited 980-nm tapered diode lasers with an output power of 7.7 W

Paschke, K., Sumpf, B., Dittmar, F., Erbert, G., Staske, R., Wenzel, H., Trankle, G.

Journal:

IEEE Journal of Selected Topics in Quantum Electronics

Year:

2005

Language:

english

File:

PDF, 168 KB

english, 2005

28

SPIE Proceedings [SPIE Integrated Optoelectronic Devices 2006 - San Jose, CA (Saturday 21 January 2006)] Novel In-Plane Semiconductor Lasers V - High-efficient 650 nm laser bars with an output power of about 10 W and a wall-plug efficiency of 30%

Sumpf, Bernd, Mermelstein, Carmen, Bour, David P., Zorn, Martin, Staske, Ralf, Fricke, Jörg, Ressel, Peter, Erbert, Götz, Weyers, Markus, Tränkle, Günther

Year:

2006

Language:

english

File:

PDF, 320 KB

english, 2006

29

The fluorescence of Eu+3 in lithium tungstate borate glasses

R. Staske, P. Fröbel, M.v. Dirke, S. Müller, K. Bärner

Journal:

Solid State Communications

Year:

1991

Language:

english

File:

PDF, 312 KB

english, 1991

30

SPIE Proceedings [SPIE Integrated Optoelectronic Devices 2006 - San Jose, CA (Saturday 21 January 2006)] Novel In-Plane Semiconductor Lasers V - Highly reliable 75W InGaAs/AlGaAs laser bars with over 70% conversion efficiency

Erbert, Götz, Bugge, Frank, Knigge, Andrea, Staske, Ralf, Sumpf, Bernd, Wenzel, Hans, Tränkle, Günther, Mermelstein, Carmen, Bour, David P.

Year:

2006

Language:

english

File:

PDF, 494 KB

english, 2006

31

[IEEE LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society - San Diego, CA, USA (12-13 Nov. 2001)] LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242) - 808 nm TM-polarized GaAsP/AlGaAs high-power Al-free-active region laser diodes with high efficiency and small divergence

Sebastian, J., Bugge, F., Erbert, G., Hansel, H.G., Buhrandt, F., Knauer, A., Hulsewede, R., Wenzel, H., Staske, R., Sumpf, B., Weyers, M., Trankle, G.

Year:

2001

Language:

english

File:

PDF, 148 KB

english, 2001

32

High-power high-efficiency 1150-nm quantum-well laser

Erbert, G., Bugge, F., Fricke, J., Ressel, P., Staske, R., Sumpf, B., Wenzel, H., Weyers, M., Trankle, G.

Journal:

IEEE Journal of Selected Topics in Quantum Electronics

Year:

2005

Language:

english

File:

PDF, 206 KB

english, 2005

33

[IEEE 52nd Electronic Components and Technology Conference - San Diego, CA, USA (28-31 May 2002)] 52nd Electronic Components and Technology Conference 2002. (Cat. No.02CH37345) - Mounting of laser bars on copper heat sinks using Au/Sn solder and CuW submounts

Pittroff, W., Erbert, G., Klein, A., Staske, R., Sumpf, B., Traenkle, G.

Year:

2002

Language:

english

File:

PDF, 888 KB

english, 2002

34

55 W peak power from 1100 nm wavelength 60 µm broad-area laser diodes enabled by reduced carrier accumulation in the waveguide

Pietrzak, A, Crump, P, Wenzel, H, Staske, R, Erbert, G, Tränkle, G

Journal:

Semiconductor Science and Technology

Year:

2009

Language:

english

File:

PDF, 337 KB

english, 2009

35

SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California, USA (Saturday 2 February 2013)] Novel In-Plane Semiconductor Lasers XII - 654 nm broad area lasers for QCW operation with a maximal facet load of 76 mW/μm

Sumpf, B., Pohl, M., Pittroff, W., Staske, R., Erbert, G., Tränkle, G., Belyanin, Alexey A., Smowton, Peter M.

Year:

2013

Language:

english

File:

PDF, 716 KB

english, 2013

36

SPIE Proceedings [SPIE Symposium on Integrated Optoelectronics - San Jose, CA (Thursday 20 January 2000)] Laser Diodes and LEDs in Industrial, Measurement, Imaging, and Sensors Applications II; Testing, Packaging, and Reliability of Semiconductor Lasers V - Al-free 950-nm BA diode lasers with high efficiency and reliability at 50° C ambient temperature

Erbert, Goetz, Beister, Gerhard, Knauer, Arne, Maege, Juergen, Pittroff, Wolfgang, Ressel, Peter, Sebastian, Juergen, Staske, R., Wenzel, Hans, Weyers, Marcus, Traenkle, Guenther, Burnham, Geoffrey T.

Year:

2000

Language:

english

File:

PDF, 269 KB

english, 2000

37

High-power 808 nm lasers with a super-large optical cavity

Knauer, A, Erbert, G, Staske, R, Sumpf, B, Wenzel, H, Weyers, M

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 128 KB

english, 2005

38

SPIE Proceedings [SPIE Optoelectronics '99 - Integrated Optoelectronic Devices - San Jose, CA (Saturday 23 January 1999)] In-Plane Semiconductor Lasers III - Diode lasers with Al-free quantum wells embedded in LOC AlGaAs waveguides between 715 nm and 840 nm

Erbert, Goetz, Bugge, Frank, Knauer, Arne, Maege, Juergen, Oster, Andrea, Sebastian, Juergen, Staske, R., Thies, A., Wenzel, Hans, Weyers, Marcus, Traenkle, Guenther, Choi, Hong K., Zory, Peter S.

Year:

1999

Language:

english

File:

PDF, 1.24 MB

english, 1999

39

12 W continuous-wave diode lasers at 1120 nm with InGaAs quantum wells

F. Bugge, G. Erbert, J. Fricke, S. Gramlich, R. Staske, H. Wenzel, U. Zeimer, M. Weyers

Year:

2001

Language:

english

File:

PDF, 306 KB

english, 2001

40

[IEEE 2008 Conference on Lasers and Electro-Optics (CLEO) - San Jose, CA, USA (2008.05.4-2008.05.9)] 2008 Conference on Lasers and Electro-Optics - 808-nm TM polarised high power broad area Lasers with 69.5% power conversion efficiency at 71-W

Crump, P., Wenzel, H., Erbert, G., Einfeldt, S., Ressel, P., Zorn, M., Bugge, F., Spreemann, M., Dittmar, F., Staske, R., Trankle, G.

Year:

2008

Language:

english

File:

PDF, 242 KB

english, 2008

41

Oxide-free etching of (100) InP surfaces

A. Knauer, D. Hirsch, R. Staske, U. Zeimer

Journal:

Crystal Research and Technology

Year:

1989

Language:

english

File:

PDF, 547 KB

english, 1989

42

Creating Relational Ties in Talk: The Collaborative Construction of Relational Jealousy

Shirley A. Staske

Journal:

Symbolic Interaction

Year:

1999

Language:

english

File:

PDF, 1.83 MB

english, 1999

43

[IEEE 11th European Quantum Electronics Conference (CLEO/EQEC) - Munich, Germany (2009.06.14-2009.06.19)] CLEO/Europe - EQEC 2009 - European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference - Limitations to peak continuous wave power in high power broad area single emitter 980 nm diode lasers

Crump, P., Roder, C., Staske, R., Pietrzak, A., Pittroff, W., Ginolas, A., Fricke, J., Paschke, K., Bugge, F., Ressel, P., Wenzel, H., Erbert, G.

Year:

2009

Language:

english

File:

PDF, 176 KB

english, 2009

44

Dependence of the photoluminescence density on surface preparation and properties of n -type InP

Knauer, A, Gramlich, S, Staske, R

Journal:

Soviet Journal of Quantum Electronics

Year:

1988

Language:

english

File:

PDF, 184 KB

english, 1988

45

InGaAsP/InP DCPBH Laser Diode with a Symmetric Waveguide for 1.3 μm Wavelength

W. Both, H. Bachert, A. Knauer, J. Piprek, W. Pittroff, R. Puchert, R. Rimpler, U. Schade, R. Staske, K. Vogel, G. Wagner, U. Zeimer

Journal:

physica status solidi (a)

Year:

1991

Language:

english

File:

PDF, 435 KB

english, 1991

46

Laser diodes with highly strained InGaAs MQWs and very narrow vertical far fields

F. Bugge, U. Zeimer, H. Wenzel, R. Staske, B. Sumpf, G. Erbert, M. Weyers, G. Tränkle

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 330 KB

english, 2006

47

SPIE Proceedings [SPIE SPIE LASE: Lasers and Applications in Science and Engineering - San Jose, CA (Saturday 24 January 2009)] High-Power Diode Laser Technology and Applications VII - 20W continuous wave reliable operation of 980nm broad-area single emitter diode lasers with an aperture of 96μm

Crump, P., Blume, G., Paschke, K., Staske, R., Pietrzak, A., Zeimer, U., Einfeldt, S., Ginolas, A., Bugge, F., Häusler, K., Ressel, P., Wenzel, H., Erbert, G., Zediker, Mark S.

Year:

2009

Language:

english

File:

PDF, 989 KB

english, 2009

48

[IEEE Third International Conference Indium Phosphide and Related Materials - Cardiff, UK (8-11 April 1991)] [Proceedings 1991] Third International Conference Indium Phosphide and Related Materials - Influence of lattice parameter variations across n-InP-substrates on a complex of material properties of InP/InGaAsP-DHS

Knauer, A., Staske, R., Krausslich, J., Kittner, R.

Year:

1991

Language:

english

File:

PDF, 276 KB

english, 1991

49

High-power and high temperature long-term stability of Al-free 950 nm laser structures on GaAs

Beister, G., Erbert, G., Knauer, A., Maege, J., Ressel, P., Sebastian, J., Staske, R., Wenzel, H.

Journal:

Electronics Letters

Year:

1999

Language:

english

File:

PDF, 101 KB

english, 1999

50

ChemInform Abstract: SYNTHESIS AND BIOCHEMICAL ACTIVITY OF PERFLUOROALKYLATED DERIVATIVES OF 5′-DEOXY-5′-FLUORO- AND 2′,5′-DIDEOXY-5′-FLUOROURIDINE

CECH, D., HERRMANN, G., STASKE, R., LANGEN, P., PREUSSEL, B.

Journal:

Chemischer Informationsdienst

Year:

1979

File:

PDF, 119 KB

1979

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